长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器     

二阶Volterra系统对平稳正态激励的统计响应的表示定理的数学证明

1974年,Neal根据Kac和Siegert的思想,给出了一个在电子工程、海洋工程、建筑工程、航空工程、自动控制的随机振动中有重要应用的二阶Volterra非线性系统对平稳正态输入的统计响应的表示定理.1984年,Naess对此定理又给出了一个数学证明.经过研究后发现,他们对定理条件的叙述都是模糊的,而且其数学证明都是有问题的.本文重新讨论了这个表示定理,给出了明确的定理条件及严格的数学证明,为它的广泛应用奠定了理论基础.     

Decomposition of a class of functionals

LetX(t) be a symmetric conservative Hunt process. In this paper, we decompose the functionalu(X(t), t) into a sum of a square integrable martingale and a regular 0-quadratic variation process. This paper is based on the author's dissertation, presented for the degree of Doctor of philosophy in Institute of Applied Mathematics, Academia Sinica under the supervision of Prof. Yan Jia-an.     

斜角入射沉积法制备渐变折射率薄膜的折射率分析

斜角入射沉积法是一种制备薄膜的新颖方法,它可以用来制备渐变折射率薄膜.本文首先探讨了膜料的沉积入射角为α,薄膜柱状生长倾斜角为β时的薄膜的填充系数;之后利用drude理论,分析研究了斜角入射沉积法制备渐变折射率薄膜的折射率与薄膜的入射角和生长方向的关系. 关键词： 斜角入射沉积 渐变折射率 填充系数     

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm.     

“阳”加速器钼丝X-pinch初步实验研究

 在“阳”加速器上进行了直径分别为10, 15, 20 μm, 交叉角为32°,45°,60°的钼（Mo）丝X-pinch实验。“阳”加速器产生的电流峰值约520 kA，上升时间80 ns。实验中通过X射线功率谱仪和纳秒分幅相机等仪器对Mo丝X-pinch辐射特性进行了诊断。实验表明：Mo丝X-pinch过程中会出现多次X射线爆发，箍缩过程中产生的热点辐射出能量超过3 keV的X射线，探测到的最小热点直径小于30 μm。     

高掺杂Ga对ZnSe:Ga,Cu晶体中深中心发射的影响

本文研究了高掺杂Ga对ZnSe:Ga,Cu晶体中深中心光致发光谱带的影响。首次在高掺杂ZnSe:Ga,Cu中观察到了Cu-G带峰值位置随Ga浓度增大向长波方向移动的现象,并把它归因于高浓度的Ga和Cu相互作用,产生了谱峰为5580Å的新发射带,其半高宽(FWHM)大于Cu-G谱带的半高宽。此外还得到,随着Cu浓度增加,Cu-G带与Cu-R带强度之比减小。文中指出,Ga浓度较低时,ZnSe:Ga,Cu晶体与ZnSe:Cu晶体有相同的Cu深中心发射规律,即随着Cu浓度增大,Cu-G带与Cu-R带的强度比增大,由Cu-R发射带占优势逐渐过渡到Cu-G发射带占优势。     

快中子照相中的点扩展函数计算

 快中子照相中，基于反冲核原理探测快中子的有机闪烁体平板是普遍采用的快中子辐射转换体。模拟了D-T中子垂直入射BC400闪烁体平板，计算了不同厚度平板闪烁体的点扩展函数，对14.1 MeV快中子照相中闪烁体固有分辨率随厚度的变化进行了研究。计算结果表明，在不考虑二次中子与闪烁体作用及背景噪声等情况时，点扩展函数几乎不依赖于闪烁体厚度。同时，计算还表明在一定的分辨率范围内，由于荧光收集效率的限制，闪烁体厚度增加并不会改善图像对比度。     

A New theory for evaluating the number density of inclusions in films

A new formulation derived from thermal characters of inclusions and host films for estimating laser induced damage threshold has been deduced. This formulation is applicable for dielectric films when they are irradiated by laser beam with pulse width longer than tens picoseconds. This formulation can interpret the relationship between pulse-width and damage threshold energy density of laser pulse obtained experimentally. Using this formulation, we can analyze which kind of inclusion is the most harmful inclusion. Combining it with fractal distribution of inclusions, we have obtained an equation which describes relationship between number density of inclusions and damage probability. Using this equation, according to damage probability and corresponding laser energy density, we can evaluate the number density and distribution in size dimension of the most harmful inclusions.     

用时间-边界跟踪模型确定抗蚀剂显影后的轮廓分布

文章提出了时间一边界跟踪模型的定义,阐述了用该模型确定抗蚀剂显影后的轮廓分布的方法,并给出了模拟计算结果.